DMG6898LSD

DMG6898LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) NEW PRODUCT D1 D1 D2 D2 ESD PROTECTED TO 2kV G1 S1 G2 S2 TOP VIEW Internal Schematic TOP VIEW Maximum Ratings Drain-Source Voltage Gate-Source Voltage @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25°C TA = 85°C ID IDM Value 20 ±12 9.5 7.1 30 Unit V V A A Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4) Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 1.28 99.3 -55 to +150 Unit W °C/W °C 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limit...