2SB1116/2SB1116A PNP General Purpose Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum R...
2SB1116/2SB1116A
PNP General Purpose
Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum Ratings ( TA=25℃ C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -60 -50 -6.0 1000 1116A -80 -60 -6.0 Unit V V V mA
THERMAL CHARACTERISTICS
Charact er ist ics Total Device Dissipation Alumina Substrate,TA=25°C Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 750 Unit mW °C °C
+150 -55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (lC=-100μA, lE=0) Collector-Emitter Breakdown Voltage (lC=-1mA, lB=0) Emitter-Base Breakdown Voltage (lE=-100μA, lC=0)
1116 1116A 1116 1116A 1116 1116A
V(BR)CBO V(BR)CEO V(BR)EBO
-60 -80 -50 -60 -6.0
V
V V
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22-Jan-09
Free Datasheet http://www.datasheet4u.com/
2SB1116/2SB1116A
ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS
VCB=-60V, lE=0 VCB=-80V, lE=0 VEB=-6V, lC=0 1116 1116A lCBO lEBO -0.1 -0.1 µA
Max
Unit
µA
ELECTRICAL CHARACTERISTICS (TA=25℃ C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ ON CHARACTERISTICS
DC current gain VCE=-2V, lc=-0.1A VCE=-2V, lc=-1A Collector emitter saturation voltage lC=-1A, lB=-50mA Base emitter saturation voltage lC=-1A, lB=-50mA Base emitter voltage VCE...