RLT850M-1WG50

RLT850M-1WG50 TECHNICAL DATA Infrared Laser Diode Specifications Structure: Peak Wavelength: Optical Output Power: Package: Monitor PD: AlGaAs/InGaAs AlGaAs/InGaAs 852 nm 1 W, cw 9 mm, flat window build-in n-type Electrical Connection Pin Configuration n-type PIN 1 2 3 Function LD Cathode LD Anode, PD Cathode (case) PD Anode Bottom View Electro-Optical Characteristics Item Optical Specifications Central Wavelength Spectral Width (FWHM) Optical Output Power Beam Divergence Emitting Aperture Mode Structure Electrical Specifications Forward Current Threshold Current Forward Voltage Slope Efficiency Monitor Current Absolute Maximum Ratings Lifetime Operating Case Temperature Storage Temperature Soldering Temperature * * must be completed within 3 seconds specified at 25°C Symbol λC Δλ PO θ║ θ┴ WxH Min. 847 Typ. 852 2 1.0 8 30 1x50 MM 1.09 180 1.9 1.2 Max. 857 4 11 35 Unit nm nm W deg. deg. µm IF ITH VF η IM 1.0 0.05 10000 -20 -40 - 1.20 220 2.2 1.3 A mA V W/A mA hour °C °C °C TC TSTG TSOL 25 - +50 +85 250 Note: The above specifications are for reference purpose only and subjected to change without prior notice. 04.12.2012 RLT850M-1WG50 1 of 3 Free Datasheet http://www.datasheet4u.com/ Package Dimensions 9 mm Package Unit: mm Note: From 9 mm center to PD edge: 0.75±0.05 mm 04.12.2012 RLT850M-1WG50 2 of 3 Free Datasheet http://www.datasheet4u.com/ Precaution for Use 1. Cautions This LD must be cooled! DO NOT look directly into the emitting are...