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RLT1550-100G

Infrared Laser Diode

Description

RLT1550-100G TECHNICAL DATA Infrared Laser Diode Structure: GaInAsP/InP, SQW structure Lasing wavelength: typ. 1580 nm, multi mode Max. optical power: 100 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Laserdiode cathode 2) Laserdiode anode and photodiode cathode 3) Photodiode anode Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST ...

Roithner

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