Infrared Laser Diode
v 1.0 26.04.2013
RLT1070-10MG
Description
RLT1070-10MG is a Laser Diode emitting at 1070 nm with rated output power of...
Description
v 1.0 26.04.2013
RLT1070-10MG
Description
RLT1070-10MG is a Laser Diode emitting at 1070 nm with rated output power of 10 mW CW at room temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built in monitor PD.
Maximum Ratings
Parameter Optical Output Power Operating Temperature Storage Temperature Soldering Temperature Symbol PO TCASE TSTG TSOLD -10 -40 +60 +80 Values Min. Max. Unit mW °C °C °C
Specifications
Parameter Central Wavelength Optical Output Power Emitting Area Threshold Current Forward Current Forward Voltage Beam Divergence Beam Divergence Spectral Width (FWHM) Static Alignment Positional Accuracy Mode Structure Slope Efficiency Monitor Current η IM 0.01 Symbol λC PO WxH ITH IOP UOP ӨII Ө┴ Δλ Δa II x ΔX, ΔY, ΔZ 6 20 Min. 1060 Values Typ. 1070 10 3 x 1.5 15 25 1.6 8 25 1.5 SM 0.8 0.2 25 35 2.4 12 30 < ±3 ±100 Max. 1080 11 Unit nm mW µm mA mA V deg. deg. nm deg. µm mW/mA mA
* Wavelength drift under temperature change: - <0.3 nm/°C
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Electrical Connection
Lead PIN 1 PIN 2 PIN 3 LD Anode LD Cathode, PD Anode (case) PD Cathode Bottom View Description
Drawing
All dimensions in mm
Mounting Instruction
In order to maintain lifetime and stability of the laser diode it is essential to provide efficient heat management. Heat dissipation is possible through the base plate only. For long time stable operation proper contact between laser diode base plate and heat sink is ma...
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