STH13009

STH13009 High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ . High voltage capability Low spread of dynamic parameters Very high switching speed Applications ■ Switching mode power supplies 1 2 3 Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Figure 1. TO-220 Internal schematic diagram Table 1. Device summary Marking H13009 Package TO-220 Packaging Tube Order code STH13009 October 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Free Datasheet http://www.datasheet4u.com/ Absolute maximum ratings STH13009 1 Absolute maximum ratings Table 2. Symbol VCEV VCEO VEBO IC ICM IB IBM PTOT Tstg TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = -1.5V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tp < ms) Base current Base peak current (tp < ms) Total dissipation at Tcase = 25°C Storage temperature Max. operating junction temperature Value 700 400 12 12 24 6 12 100 -65 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol Rthj-case Thermal data Parameters Thermal resistance junction-case __max Value 1.25 Unit °C/W 2/9 Free Datasheet http://www.datasheet4u.com/ STH13009 E...