DatasheetsPDF.com

IRFB3006PBF Dataheets PDF



Part Number IRFB3006PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFB3006PBF DatasheetIRFB3006PBF Datasheet (PDF)

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3006PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.1m: 2.5m: c 270A S ID (.

  IRFB3006PBF   IRFB3006PBF



Document
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free IRFB3006PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.1m: 2.5m: c 270A S ID (Package Limited) 195A D S D G TO-220AB G Gate D Drain S Source Base Part Number IRFB3006PbF Package Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRFB3006PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) d Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) IAR EAR e Single Pulse Avalanche Energy Ãd Avalanche Current g Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter k Junction-to-Case RθCS RθJA Case-to-Sink, Flat Greased Surface jk Junction-to-Ambient Max. ™ 270 ™ 190 195 1080 375 2.5 ± 20 10 -55 to + 175 300 x x 10lb in (1.1N m) 320 See Fig. 14, 15, 22a, 22b, Typ. ––– 0.50 ––– Max. 0.4 ––– 62 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 23, 2014 IRFB3006PbF Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Internal Gate Resistance 60 ––– ––– ––– 0.07 2.1 ––– ––– 2.5 V VGS = 0V, ID = 250μA d V/°C Reference to 25°C, ID = 5mA g mΩ VGS = 10V, ID = 170A 2.0 ––– 4.0 V VDS = VGS, ID = 250μA ––– ––– 20 μA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 60V, VGS = 0V, TJ = 125°C ––– ––– 100 nA VGS = 20V ––– ––– -100 VGS = -20V ––– 2.0 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 280 ––– ––– Qg Total Gate Charge ––– 200 300 Qgs Gate-to-Source Charge ––– 37 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 60 Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 140 ––– td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 182 ––– td(off) Turn-Off Delay Time ––– 118 ––– tf Fall Time ––– 189 ––– Ciss Input Capacitance ––– 8970 ––– Coss Output Capacitance ––– 1020 ––– Crss Reverse Transfer Capacitance ––– 534 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 ––– h Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1920 ––– S VDS = 25V, ID = 170A nC ID = 170A g VDS =30V VGS = 10V ID = 170A, VDS =0V, VGS = 10V ns VDD = 39V ID = 170A g RG = 2.7Ω VGS = 10V pF VGS = 0V VDS = 50V ƒ = 1.0 MHz, See Fig. 5 i VGS = 0V, VDS = 0V to 48V , See Fig. 11 h VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ãd (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ton Forward Turn-On Time Min. Typ. Max. Units Conditions ™ ––– ––– 270 A MOSFET symbol D showing the ––– ––– 1080 A integral reverse G p-n junction diode. S g ––– ––– 1.3 V TJ = 25°C, IS = 170A, VGS = 0V ––– 44 ––– ns TJ = 25°C VR = 51V, ––– 48 ––– TJ = 125°C ––– 63 ––– nC TJ = 25°C g IF = 170A di/dt = 100A/μs ––– 77 ––– TJ = 125°C ––– 2.4 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) ‚ Repetitive rating; pulse width limited by max. junction temperature. ƒ Limited by TJmax, starting TJ.


IRFB3006GPBF IRFB3006PBF IRFH6200PBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)