Document
Applications
l High Efficiency Synchronous Rectification
in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
G
l Hard Switched and High Frequency Circuits
Benefits l Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness l Fully Characterized Capacitance and
Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free
IRFB3006PbF
HEXFET® Power MOSFET
D VDSS RDS(on) typ. max.
ID (Silicon Limited)
60V
2.1m: 2.5m:
c 270A
S ID (Package Limited) 195A
D
S D G
TO-220AB
G Gate
D Drain
S Source
Base Part Number IRFB3006PbF
Package Type TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number IRFB3006PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS dv/dt
Gate-to-Source Voltage
f Peak Diode Recovery
TJ TSTG
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited) IAR EAR
e Single Pulse Avalanche Energy Ãd Avalanche Current g Repetitive Avalanche Energy
Thermal Resistance
Symbol RθJC
Parameter
k Junction-to-Case
RθCS RθJA
Case-to-Sink, Flat Greased Surface
jk Junction-to-Ambient
Max.
270 190
195 1080 375 2.5 ± 20
10 -55 to + 175
300
x x 10lb in (1.1N m)
320 See Fig. 14, 15, 22a, 22b,
Typ. ––– 0.50 –––
Max. 0.4 ––– 62
Units
A
W W/°C
V V/ns
°C
mJ A mJ Units °C/W
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April 23, 2014
IRFB3006PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) IDSS
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
60 ––– –––
––– 0.07 2.1
––– ––– 2.5
V VGS = 0V, ID = 250μA
d V/°C Reference to 25°C, ID = 5mA g mΩ VGS = 10V, ID = 170A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
––– ––– 20 μA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 60V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 2.0 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
280 ––– –––
Qg
Total Gate Charge
––– 200 300
Qgs
Gate-to-Source Charge
––– 37 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 60
Qsync
Total Gate Charge Sync. (Qg - Qgd)
––– 140 –––
td(on)
Turn-On Delay Time
––– 16 –––
tr
Rise Time
––– 182 –––
td(off)
Turn-Off Delay Time
––– 118 –––
tf
Fall Time
––– 189 –––
Ciss
Input Capacitance
––– 8970 –––
Coss
Output Capacitance
––– 1020 –––
Crss
Reverse Transfer Capacitance
––– 534 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1480 –––
h Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 1920 –––
S VDS = 25V, ID = 170A nC ID = 170A
g VDS =30V
VGS = 10V ID = 170A, VDS =0V, VGS = 10V ns VDD = 39V ID = 170A
g RG = 2.7Ω
VGS = 10V pF VGS = 0V
VDS = 50V ƒ = 1.0 MHz, See Fig. 5
i VGS = 0V, VDS = 0V to 48V , See Fig. 11 h VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 270 A MOSFET symbol
D
showing the
––– ––– 1080 A integral reverse
G
p-n junction diode.
S
g ––– ––– 1.3 V TJ = 25°C, IS = 170A, VGS = 0V
––– 44 ––– ns TJ = 25°C
VR = 51V,
––– 48 –––
TJ = 125°C
––– 63 ––– nC TJ = 25°C
g IF = 170A
di/dt = 100A/μs
––– 77 –––
TJ = 125°C
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes: Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction
temperature. Limited by TJmax, starting TJ.