Power MOSFET
AUTOMOTIVE GRADE
PD - 96369
AUIRLR3110Z AUIRLU3110Z
Features
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Advanced Process Technology Ultra Low On-R...
Description
AUTOMOTIVE GRADE
PD - 96369
AUIRLR3110Z AUIRLU3110Z
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
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G S
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
100V 11mΩ 14mΩ 63A 42A
k
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S G
S D G
D-Pak AUIRLR3110Z
I-Pak AUIRLU3110Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, un...
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