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AUIRF2903Z

International Rectifier

Power MOSFET

AUTOMOTIVE GRADE PD -96379 AUIRF2903Z HEXFET® Power MOSFET D Features l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ...


International Rectifier

AUIRF2903Z

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Description
AUTOMOTIVE GRADE PD -96379 AUIRF2903Z HEXFET® Power MOSFET D Features l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ 2.4mΩ 260Ak 160A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S max. ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G D S TO-220AB AUIRF2903Z G D S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Par...




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