LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3209CSM
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY ...
LAB
MECHANICAL DATA Dimensions in mm (inches)
SEME
2N3209CSM
HIGH SPEED,
PNP, SWITCHING
TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.51 ± 0.10 (0.02 ± 0.004)
0.31 rad. (0.012)
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) CECC SCREENING OPTIONS
A 1.40 (0.055) max.
2.54 ± 0.13 (0.10 ± 0.005)
3
2
1
1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005)
0.76 ± 0.15 (0.03 ± 0.006)
0.31 rad. (0.012)
SPACE QUALITY LEVELS OPTIONS HIGH SPEED SATURATED SWITCHING
A = 1.02 ± 0.10 (0.04 ± 0.004)
Underside View PAD 1 PAD 2 PAD 3 Base Emitter Collector
APPLICATIONS:
For high reliablitity general purpose applications requiring small size and low weight devices.
SOT23 CERAMIC (CSM) LCC1 PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature –20V –20V –4V –200mA 300mW 2.20mW / °C 420°C / W 200°C –55 to 200°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/93
LAB
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus)* V(BR)CBO* V(BR)EBO* ICES* Collector – Emitter Sustaining Voltage Collector – Base Breakdown V...