isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC2810
DESCRIPTION ·Low Collector Saturation Voltage ·Good Li...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC2810
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
50
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC2810
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB=7V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= 0.5A ; VCE= 12V
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 μA
100 μA
10
18
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet ...