2SC643A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION ¡¤With TO-3 package ¡¤High voltage,high reliability ¡¤Low collector saturation voltage APPLICATIONS ¡¤For color TV horizontal PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ¡¤ output applications Absolute maximum ratings(Ta=¡æ ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25¡æ Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 2.5 50 150 -55~150 ¡æ ¡æ UNIT V V V A W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER CONDITIONS MIN 2SC643A SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 ¦Ì A IEBO Emitter cut-off current VEB=5V; IC=0 100 ¦Ì A hFE DC current gain IC=2A ; VCE=15V 5 fT Transition frequency IC=0.1A ; VCE=10V 2 MHz 2 Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product...