2SC6064

Ordering number : ENA0270 2SC6064 2SC6064 Applications NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings 80 80 50 6 2 4 0.9 150 --55 to +150 Unit V V V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=100mA VCE=2V, IC=1.5A VCE=10V, IC=300mA VCB=10V, f=1MHz Ratings min typ max 1 1 200 40 420 9 MHz pF 560 Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO repres...