2N3019

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Amplifier and switching circuits. DESCRIPTION NPN medium power transistor in a TO-39 metal package. 1 handbook, halfpage 2 2N3019 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 3 MAM317 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tamb ≤ 25 °C Tcase ≤ 25 °C IC = 150 mA; VCE = 10 V IC = 50 mA; VCE = 10 V; f = 100 MHz open emitter open base CONDITIONS − − − − − 100 100 MIN. MAX. 140 80 1 800 5 300 − MHz V V A mW W UNIT 1997 Jun 19 2 Philips Semiconductors Product specification NPN medium power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C Tcase ≤ 25 °C C...