SIA449DJ

SiA449DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) 0.020 at VGS = - 10 V 0.024 at VGS = - 4.5 V 0.038 at VGS = - 2.5 V ID (A) - 12a - 12a - 12 a FEATURES Qg (Typ.) 23.1 nC PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Providing low voltage drop in Smart Phones, Tablet PCs, Mobile Computing: - Power Management - Charger Switches - Load Switches - DC/DC Converters Marking Code BWX Part # code XXX S G 2.05 mm Ordering Information: SiA449DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D Lot Traceability and Date code P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 12 - 12a - 12a - 10.4b, c - 8.3b, c - 30 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Paramete...