SIA433EDJ

New Product SiA433EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.018 at VGS = - 4.5 V 0.026 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A) - 12a - 12a -4 20 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Built in ESD Protection with Zener Diode Typical ESD Performance: 1800 V Compliant to RoHS Directive 2002/95/EC PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G S APPLICATIONS Portable Devices - Load Switch - Battery Switch - Charger Switch Marking Code BLX Part # code XXX G R 2.05 mm Lot Traceability and Date code Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS ID IDM IS Limit - 20 ± 12 - 12a - 12a - 11.3b, c - 9.1b, c - 50 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) °C THERMAL RESISTANCE RATINGS Para...