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2SC3866

Part Number	2SC3866
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Oct 9, 2013
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : V(BR)CBO= 900V(Min) ·High Switching Speed ·High ...
Datasheet	2SC3866 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : V(BR)CBO= 900V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 900 V 800 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 10 V 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 1 A 40 W 1...

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