TSA20N50M

TSA20N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 20.0A, 500V, RDS(on) = 0.26Ω @VGS = 10 V Low gate charge ( typical 70nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability { D ● ◀ G { G D S ▲ ● ● {S TO-3P or TO247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS EAR dv/dt PD TJ, TSTG TL TC = 25°Cunless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) TSA20N50M 500 20 13 80 ± 30 (Note 2) (Note 1) (Note 3) Units V A A A V mJ mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 1110 28 4.5 280 2.3 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-...