ICE60N800D

Preliminary Data Sheet ICE60N800D ICE60N800D N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 5A 600V 0.65Ω 21nC Max Min Typ Typ Qg G S T0252 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings b Parameter , at Tj=25°C, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25°C Tc=25°C ID=2.5A 5 15 120 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=5A, Tj=125°C static AC (f>1Hz) Tc=25°C 2.5 50 ±20 ±30 57 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W °C Ncm M 3 & 3.5 screws 60 b Preliminary Data Sheet – Specifications subject to change SP-60N800D-000-0b 05/24/2013 Free Datasheet http://www...