ICE60N160B

Preliminary Data Sheet ICE60N160B ICE60N160B N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems Product Summary ID V(BR)DSS rDS(on) Qg TA=25oC ID=250uA VGS=10V VDS=480V D 23.8A 650V 0.14Ω 85nC Max Min Typ Typ G S T0263 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=6A 23.8 72 690 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=23.8A, Tj=125oC Static AC (f>1Hz) Tc=25oC 6 50.0 ±20 ±30 208 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C b Preliminary Data Sheet – Specifications subject to change SP-60N160B-000-2a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 1 Preliminary Data Sheet ICE6...