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ICE60N150

N-Channel Enhancement Mode MOSFET

Description

Preliminary Data Sheet ICE60N150 ICE60N150 N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=...

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