Document
Preliminary Data Sheet
ICE20N65 ICE20N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems
HALOGEN
Product Summary ID rDS(on)
FREE
TA=25oC VGS=10V VDS=480V
D
20A 700V 0.17Ω 82nC
Max Min Typ Typ
BVDSS @Tjmax ID=250uA Qg
G S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink
1=Gate, 2=Drain, 3=Source.
Maximum ratings b
Parameter
, at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit
Continuous drain current
Pulsed drain current Avalanche energy, single pulse
ID
ID, pulse E AS
Tc=25oC
Tc=25oC ID=11.5A
20
60 690
A
A mJ
Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque
a When mounted on 1inch square 2oz copper clad FR-4
I AR
dv/dt
limited by Tjmax
VDS=480V, ID=20A, Tj=125oC static AC (f>1Hz) Tc=25oC
10
50 ±20 ±30 208 -55 to +150
A
V/ns
VGS Ptot Tj, Tstg
V W
o
C
M 3 & 3.5 screws
60
Ncm
b Preliminary Data Sheet – Specifications subject to change
SP-20N65-000-4a 06/05/2013
Free Datasheet http://www.datasheet4u.com/
1
Preliminary Data Sheet
ICE20N65
Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.6mm (0.063in.) from case for 10 s 0.6
o
Symbol
Conditions
Values
Min
Typ
Max
Unit
C/W
62 260
o
C
Electrical characteristics
b , at T =25oC, unless otherwise specified j
Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold voltage
VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=650V, VGS=0V, o Tj=25 C VDS=650V, VGS=0V, o Tj=150 C VGS=±20 V, VDS=0V VGS=10V, ID=10A, o Tj=25 C VGS=10V, ID=10A, o Tj=150 C f=1 MHZ, open drain
650 2.5 -
675 3 0.1
3.5 1
V
Zero gate voltage drain current
IDSS
µA
-
0.17 0.45 4
100
100 0.199 Ω Ω nA
Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance
IGSS RDS (on)
RG
Ciss Coss
Crss gfs td(on)
tr td(off) tf
VGS=0 V, VDS=25 V, f=1 MHz
-
2650 943
pF
VDS>2*ID*RDS, ID=10A VDS=380V, VGS=10V, ID=20A, RG=4Ω (External) -
8 23 10
5 67 4.5
ns
Transconductance Turn-on delay time Rise time
Turn-off delay time Fall time
S
SP-20N65-000-4a 06/05/2013
Free Datasheet http://www.datasheet4u.com/
2
Preliminary Data Sheet
ICE20N65
Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD trr Qrr Irm VGS=0V, IS=IF 1.0 423 8 34 1.2 V ns µC A Qgs Qgd Qg Vplateau VDS=480 V, ID=20A, VGS=10 V 16 30 82 5 V nC Symbol Conditions Values Min Typ Max Unit
VRR=480V, IS=IF, diFIdt=100 A/µS
-
SP-20N65-000-4a 06/05/2013
Free Datasheet http://www.datasheet4u.com/
3
Preliminary Data Sheet
ICE20N65
Output Characteristics
60
VGS=10V
Transfer Characteristics
60
7V
50 ID - Drain Current (A) 40
50 ID - Drain Current (A) 40 30 20 10 0
TJ = 150˚C 25˚C
6V
30 20
5V
10
0
0 5 10 15 20
0
2
VDS - Drain-to-Source Voltage (V)
4 6 8 VGS - Gate-to-Source (V)
10
On Resistance vs Drain Current
400 RDS(on) - On-State Resistance (mΩ) 350 300 250 RDS(on) - On State Resistance (Normalized)
On Resistance vs Junction Temperature
4.0 3.5
3.0 2.5 2.0 1.5 1.0 0.5 0.0
VGS = 10V ID = 10A
200 150
100 50 0 0
VGS = 10V
20 40 ID - Drain current (A)
60
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (˚C)
Gate Charge
10 VGS - Gate-to-Source Voltage (V) VGS(th) - Gate Threshold Voltage (Normalized) 9 8 7 6 5
VDS = 480V ID = 20A
Gate Threshold Voltage vs Junction Temperature
1.4
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150
ID = 250μA
4
3 2 1 0 0 20 40 60 80 100 Qg - Total Gate Charge (nC)
TJ - Junction Temperature (˚C)
SP-20N65-000-4a 06/05/2013
Free Datasheet http://www.datasheet4u.com/
4
Preliminary Data Sheet
ICE20N65
Capacitance
100000
V(BR)DSS - Drain-to-Source Breakdown Voltage (Normalized)
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
10000
C-Capacitance (pF)
Ciss
1.1
ID = 1mA
1000
1.0
100
Coss
0.9
10
Crss
1 0 100 200 300 400 500 VDS - Drain-to-Source Voltage (V) 600
0.8 -50 -25 0 25 50 75 100 TJ - Junction Temperature (˚C) 125 150
Maximum Rated Forward Biased Safe Operating Area
100 r(t), Transient Thermal Resistance (Normalized)
Single Pulse, Tc = 25oC, Tj=150oC, VGS = .