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ICE20N65 Dataheets PDF



Part Number ICE20N65
Manufacturers Icemos
Logo Icemos
Description N-Channel Enhancement Mode MOSFET
Datasheet ICE20N65 DatasheetICE20N65 Datasheet (PDF)

Preliminary Data Sheet ICE20N65 ICE20N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID rDS(on) FREE TA=25oC VGS=10V VDS=480V D 20A 700V 0.17Ω 82nC Max Min Typ Typ BVDSS @Tjmax ID=250uA Qg G S T0220 ICEMOS AND ITS SISTER COMPA.

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Preliminary Data Sheet ICE20N65 ICE20N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID rDS(on) FREE TA=25oC VGS=10V VDS=480V D 20A 700V 0.17Ω 82nC Max Min Typ Typ BVDSS @Tjmax ID=250uA Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=11.5A 20 60 690 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=20A, Tj=125oC static AC (f>1Hz) Tc=25oC 10 50 ±20 ±30 208 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C M 3 & 3.5 screws 60 Ncm b Preliminary Data Sheet – Specifications subject to change SP-20N65-000-4a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 1 Preliminary Data Sheet ICE20N65 Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.6mm (0.063in.) from case for 10 s 0.6 o Symbol Conditions Values Min Typ Max Unit C/W 62 260 o C Electrical characteristics b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold voltage VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=650V, VGS=0V, o Tj=25 C VDS=650V, VGS=0V, o Tj=150 C VGS=±20 V, VDS=0V VGS=10V, ID=10A, o Tj=25 C VGS=10V, ID=10A, o Tj=150 C f=1 MHZ, open drain 650 2.5 - 675 3 0.1 3.5 1 V Zero gate voltage drain current IDSS µA - 0.17 0.45 4 100 100 0.199 Ω Ω nA Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance IGSS RDS (on) RG Ciss Coss Crss gfs td(on) tr td(off) tf VGS=0 V, VDS=25 V, f=1 MHz - 2650 943 pF VDS>2*ID*RDS, ID=10A VDS=380V, VGS=10V, ID=20A, RG=4Ω (External) - 8 23 10 5 67 4.5 ns Transconductance Turn-on delay time Rise time Turn-off delay time Fall time S SP-20N65-000-4a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 2 Preliminary Data Sheet ICE20N65 Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD trr Qrr Irm VGS=0V, IS=IF 1.0 423 8 34 1.2 V ns µC A Qgs Qgd Qg Vplateau VDS=480 V, ID=20A, VGS=10 V 16 30 82 5 V nC Symbol Conditions Values Min Typ Max Unit VRR=480V, IS=IF, diFIdt=100 A/µS - SP-20N65-000-4a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 3 Preliminary Data Sheet ICE20N65 Output Characteristics 60 VGS=10V Transfer Characteristics 60 7V 50 ID - Drain Current (A) 40 50 ID - Drain Current (A) 40 30 20 10 0 TJ = 150˚C 25˚C 6V 30 20 5V 10 0 0 5 10 15 20 0 2 VDS - Drain-to-Source Voltage (V) 4 6 8 VGS - Gate-to-Source (V) 10 On Resistance vs Drain Current 400 RDS(on) - On-State Resistance (mΩ) 350 300 250 RDS(on) - On State Resistance (Normalized) On Resistance vs Junction Temperature 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VGS = 10V ID = 10A 200 150 100 50 0 0 VGS = 10V 20 40 ID - Drain current (A) 60 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (˚C) Gate Charge 10 VGS - Gate-to-Source Voltage (V) VGS(th) - Gate Threshold Voltage (Normalized) 9 8 7 6 5 VDS = 480V ID = 20A Gate Threshold Voltage vs Junction Temperature 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 ID = 250μA 4 3 2 1 0 0 20 40 60 80 100 Qg - Total Gate Charge (nC) TJ - Junction Temperature (˚C) SP-20N65-000-4a 06/05/2013 Free Datasheet http://www.datasheet4u.com/ 4 Preliminary Data Sheet ICE20N65 Capacitance 100000 V(BR)DSS - Drain-to-Source Breakdown Voltage (Normalized) Drain-to-Source Breakdown Voltage vs. Junction Temperature 1.2 10000 C-Capacitance (pF) Ciss 1.1 ID = 1mA 1000 1.0 100 Coss 0.9 10 Crss 1 0 100 200 300 400 500 VDS - Drain-to-Source Voltage (V) 600 0.8 -50 -25 0 25 50 75 100 TJ - Junction Temperature (˚C) 125 150 Maximum Rated Forward Biased Safe Operating Area 100 r(t), Transient Thermal Resistance (Normalized) Single Pulse, Tc = 25oC, Tj=150oC, VGS = .


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