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ICE13N65

Part Number	ICE13N65
Manufacturer	Icemos
Description	N-Channel Enhancement Mode MOSFET
Published	Oct 8, 2013
Detailed Description	ICE13N65 ICE13N65 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC 13A ID=250uA 650V Max Min...
Datasheet	ICE13N65 PDF File

Overview

ICE13N65 ICE13N65 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC 13A ID=250uA 650V Max Min Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN FREE rDS(on) Qg VGS=10V VDS=480V 0.
24Ω 57nC D Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EURO...

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