600V N-Channel MOSFET
FQD5N60C / FQU5N60C N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
600 V, 2.8 A, 2.5 Ω Description
FQD5N60C / FQU5...
Description
FQD5N60C / FQU5N60C N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
600 V, 2.8 A, 2.5 Ω Description
FQD5N60C / FQU5N60C
Features
2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A Low Gate Charge (Typ. 15 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested RoHS compliant
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD5N60C / FQU5N60C 600 2.8 1.8 11.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Unit V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 ...
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