N-Channel MOSFET
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 1...
Description
FDP12N50NZ / FDPF12N50NZ — N-Channel UniFETTM II MOSFET
FDP12N50NZ / FDPF12N50NZ
N-Channel UniFETTM II MOSFET
500 V, 11.5 A, 520 m
August 2016
Features
RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A Low Gate Charge (Typ. 23 nC ) Low Crss (Typ. 14 pF ) 100% Avalanche Tested ESD Improved Capability RoHS Compliant
Applications
LCD/LED/PDP TV Lighting Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
GDS
TO-220
GDS
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS IAR EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate above 25oC
FDP12N50NZ FDPF...
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