FDP12N50

FDP12N50 / FDPF12N50 N-Channel MOSFET June 2007 FDP12N50 / FDPF12N50 N-Channel MOSFET 500V, 11.5A, 0.65Ω Features RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A Low gate charge ( Typ. 22nC) Low Crss ( Typ. 11pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS compliant UniFETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G DS TO-220 FDP Series GD S TO-220F FDPF Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 165 1.33 -55 to +150 300 -Continuous (TC = 25oC) 11.5 6.9 46 456 11.5 16.7 4.5 42 0.3 FDP12N50 FDPF12N50 500 ±30 11.5 * 6.9 * 46 * Units V V A A mJ A mJ V/ns W W/oC o o Operating and Storage Temperature Range Maximum Lead Temp...