DB2J313

DB2J313 Silicon epitaxial planar type For small current rectification  Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm  Marking Symbol: BD  Packaging DB2J31300L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current *1 Junction temperature Operating ambient temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Topr Tstg Rating 30 30 200 300 1 125 –40 to +85 –55 to +125 Unit V V mA mA A °C °C °C 1: Cathode 2: Anode Panasonic JEITA Code SMini2-F5-B SC-90A  Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics Ta = 25°C±3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 Symbol VF IR Ct trr IF = 200 mA VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 0.1 × IR , RL = 100 Ω 3.8 1.5 Conditions Min Typ Max 0.55 50 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of in...