2N2906

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2906; 2N2906A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product specification PNP switching transistors FEATURES High current (max. 600 mA) Low voltage (max. 60 V). APPLICATIONS High-speed switching Driver applications for industrial service. 1 handbook, halfpage 2N2906; 2N2906A PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: 2N2222 and 2N2222A. 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A IC Ptot hFE fT toff collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −150 mA; VCE = −10 V IC = −50 mA; VCE = −20 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA open emitter open base − − − − 40 200 − −40 −60 −600 400 120 − 300 MHz ns V V mA mW CONDITIONS − MIN. MAX. −60 V UNIT 1997 Jun 02 2 Philips Semiconductors Product specification PNP switching transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage collector-emitter voltage 2N2906 2N2906A VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (D...