PTF102003

375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET Description The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability. PTF102003 Key Features INTERNALLY MATCHED Typical WCDMA Performance at 28 V - Average Output Power = 20 W atts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels ±5 MHz, peak/avg 8.5:1 at 0.01% CCD) Typi cal Singl e Carrier WCDMA Perfor mance -35 -40 Efficiency Gain 25 20 15 10 ACPR V DD = 28 V IDQ = 1.45 A f = 2170 MHz 15 20 25 5 0 -45 -50 -55 -60 0 Gain (dB) & Efficiency (%) ACPR (dBc )x Typical CW Performance at 28 V - Output Power at P1-dB = 120 W atts - Gain = 13 dB - Efficiency = 48% Full Gold Metallization Integrated ESD Protection; Class 1 (minimum) Human Body Model Excellent Thermal Stability Broadband Internal Matching Low HCI Drift Capable of Handling 10:1 VSWR @ 28 V , 120 Watts (CW) Output Power 5 10 Output Pow er (Watts ) Guaranteed Performance WCDMA Measurements (in test fixture) VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1 Characteristic Adjacent Channel Power Ratio Gain Drain Efficiency Symbol ACPR Gps D Min — 13 19 Typ -45 14.5 22 Max -40 — — ...