STB15N25
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STB15N25
s s s s s s s s
V DSS 250 V
R DS(on) < 0.25 Ω
ID 15 A
s
s
TYPICAL RDS(on) = 0.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE LOW LEAKAGE CURRENT APPLICATION ORIENTED CHARACTERIZATION T...
