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BUX12 Dataheets PDF



Part Number BUX12
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet BUX12 DatasheetBUX12 Datasheet (PDF)

isc Silicon NPN Power Transistor BUX12 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching circuits ·Motor control Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous I.

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isc Silicon NPN Power Transistor BUX12 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching circuits ·Motor control Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 300 V 250 V 7 V 20 A 25 A 4 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 10A ;IB= 1.25A ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 200V; IB= 0 VCB= 300V; IE= 0 VCB= 300V; IE= 0;TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 4V hFE-2 DC Current Gain IC= 10A ; VCE= 4V fT Current-Gain—Bandwidth Product Switching Times IC= 1A; VCE= 15V, ftest= 10MHz ton Turn-on Time IC= 10A ;IB1= 1.25A; VCC= 150V ts Storage Time tf Fall Time IC= 10A ;IB1= -IB2= 1.25A; VCC= 150V MIN TYP. MAX UNIT 250 V 1.0 V 1.5 V 1.5 V 1.5 mA 1.5 6.0 mA 1.0 mA 20 60 10 8 MHz 1.0 μs 2.0 μs 0.5 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


LA71582M BUX12 SA9258


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