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IXTN58N50

IXYS
Part Number IXTN58N50
Manufacturer IXYS
Description (IXTN58N50 / IXTN61N50) Power MOSFET
Published Sep 28, 2013
Detailed Description High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ ...
Datasheet PDF File IXTN58N50 PDF File

IXTN58N50
IXTN58N50

Overview
High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.
0 MΩ Continuous Transient TC = 25°C TC = 25°C Pulse width limited by TJM T C = 25°C -40 .
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+150 150 -40 .
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+150 IXTN IXTN IXTN IXTN 58N50 61N50 58N50 61N50 Maximum Ratings 500 500 ±20 ±30 58 61 232 244 625 °C °C °C 2500 3000 V~ V~ Features • • • • • International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM ...


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