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IXTN600N04T2 Dataheets PDF



Part Number IXTN600N04T2
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTN600N04T2 DatasheetIXTN600N04T2 Datasheet (PDF)

TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.3mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 40 40 ±20 60.

  IXTN600N04T2   IXTN600N04T2


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TrenchT2TM GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTN600N04T2 VDSS ID25 = = RDS(on) ≤ 40V 600A 1.3mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 40 40 ±20 600 200 1800 200 3 940 -55 ... +175 175 -55 ... +175 V V V A A A A J W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Features z z Mounting Torque Terminal Connection Torque z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating Temperature Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C Characteristic Values Min. Typ. Max. 40 1.5 3.5 ±200 V V nA z z z Easy to Mount Space Savings High Power Density Applications z z z 10 μA 1 mA 1.3 mΩ VGS = 10V, ID = 100A, Note 1 DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications © 2012 IXYS CORPORATION, All Rights Reserved DS100172B(10/12) Free Datasheet http://www.datasheet4u.com/ IXTN600N04T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss RGI td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 90 150 40 6400 1470 1.32 40 20 90 250 590 127 163 S nF pF pF Ω ns ns ns ns nC nC nC 0.16 °C/W °C/W (M4 screws (4x) supplied) SOT-227B (IXTN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 150A, VGS = 0V -di/dt = 100A/μs VR = 20V 100 3.3 165 Characteristic Values Min. Typ. Max. 600 1800 1.2 A A V ns A nC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 Free Datasheet http://www.datasheet4u.com/ IXTN600N04T2 Fig. 1. Output Characteristics @ T J = 25ºC 350 300 250 VGS = 15V 10V 7V 400 VGS = 15V 350 300 10V 7V 6V Fig. 2. Extended Output Characteristics @ T J = 25ºC ID - Amperes 200 150 100 50 ID - Amperes 6V 250 5V 200 150 100 50 4V 4.5V 5V 4.5V 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150ºC 350 300 250 VGS = 15V 10V 7V 2.0 Fig. 4. Normalized RDS(on) vs. Junction Temperature VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 I D < 600A ID - Amperes 6V 200 5V 150 100 50 3V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 4V R DS(on) - Normalized 0.6 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. Normalized RDS(on) vs. Drain Current 2.0 VGS = 10V 15V 220 200 180 160 Fig. 6. Drain Current vs. Case Temperature 1.8 External Lead Current Limit R DS(on) - Normalized 1.6 ID - Amperes 350 TJ = 175ºC 140 120 100 80 60 40 20 1.4 1.2 TJ = 25ºC 1.0 0.8 0 50 100 150 200 250 300 0 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade © 2012 IXYS CORPORATION, All Rights Reserved Free Datasheet http://www.datasheet4u.com/ IXTN600N04T2 Fig. 7. Input Admittance 200 180 160 140 TJ = 150ºC 25ºC - 40ºC 200 25ºC 240 TJ = - 40ºC Fig. 8. Transconductance 120 100 80 60 40 20 0 2.0 2.5 3.0 g f s - Siemens 160 150ºC 120 ID - Amperes 80 40 0 3.5 4.0 4.5 5.0 0 20 40 60 80 100 120 140 160 180 200 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 300 8 250 7 10 9 VDS = 20V I D = 300A I G = 10mA Fig. 10. Gate Charge IS - Amperes 200 150 100 50 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 TJ = 150ºC TJ = 25ºC VGS - Volts 6 5 4 3 2 1 0 0 100 200 300 400 500 600 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100.0 10,000 Fig. 12..


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