IXKH47N60C

IXKH 47N60C CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET D VDSS = 600 V ID25 = 47 A RDS(on) max = 70 mΩ TO-247 G G D S S q tab E72873 MOSFET Symbol VDSS VGS ID25 ID100 EAS EAR dV/dt Symbol TC = 25°C TC = 100°C single pulse ID = 10 A; TC = 25°C repetitive ID = 20 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Conditions Conditions TVJ = 25°C Maximum Ratings 600 ± 20 47 30 1800 tbd tbd V V A A mJ mJ V/ns Features 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Applications Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 1) Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. 60 2 TVJ = 25°C TVJ = 150°C max. 70 4 25 250 ±100 tbd tbd 255 30 110 20 27 111 10 0.3 650 mΩ V µA µA nA pF pF nC nC nC ns ns ns ns K/W RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC c VGS = 10 V; ID = ID100 c VDS = VGS; ID = 2 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz VGS = 0 to 10 V; VDS = 350 V; ID = 40 A CoolMOS™ is a trademark of Infineon Technologies AG. VGS = 10 V; VDS = 380 V ID = 47 A; RG = 4.7 Ω Pulse test, t < 300 µs, duty cycle d < 2% IXYS reserves the right to change limits, test conditions and dimensions. 20080523a © 2008 IXY...