IGBT
GenX3TM 600V IGBT
Ultra-low Vsat PT IGBTs for up to 5kHz switching
IXGR72N60A3
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
...
Description
GenX3TM 600V IGBT
Ultra-low Vsat PT IGBTs for up to 5kHz switching
IXGR72N60A3
VCES IC110 VCE(sat) tfi(typ)
= = ≤ =
600V 52A 1.35V 250ns
Symbol VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC TL TSOLD VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 52 400 ICM = 150 200 -55 ... +150 150 -55 ... +150 V V V V A A A W °C °C °C N/lb. °C °C V~ V~ g
z z
ISOPLUS247TM (IXGR) E153432
G
C
E
Isolated Tab
G = Gate C = Collector
E
= Emitter
Features
z
Mounting Force 1.6mm (0.063 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA
20..120/4.5..27 300 260 t = 1min 2500 t = 1s 3000 5
Silocon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation
Advantages
z z
High power density Low gate drive requirement
Applications
z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 60A, VGE = 15V, Note TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 75 750 ± 100 1.35 V V μA μA nA V
z z z z z z z
Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits
© 2008 IXYS CORPORATION, All rights reserved
DS9...
Similar Datasheet
- IXGR72N60A3 IGBT - IXYS
- IXGR72N60B3H1 IGBT - IXYS
- IXGR72N60C3D1 IGBT - IXYS