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IXGR72N60A3

IXYS

IGBT

GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR72N60A3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = ...


IXYS

IXGR72N60A3

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Description
GenX3TM 600V IGBT Ultra-low Vsat PT IGBTs for up to 5kHz switching IXGR72N60A3 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 52A 1.35V 250ns Symbol VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC TL TSOLD VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 52 400 ICM = 150 200 -55 ... +150 150 -55 ... +150 V V V V A A A W °C °C °C N/lb. °C °C V~ V~ g z z ISOPLUS247TM (IXGR) E153432 G C E Isolated Tab G = Gate C = Collector E = Emitter Features z Mounting Force 1.6mm (0.063 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA 20..120/4.5..27 300 260 t = 1min 2500 t = 1s 3000 5 Silocon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Advantages z z High power density Low gate drive requirement Applications z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = ± 20V IC = 60A, VGE = 15V, Note TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 75 750 ± 100 1.35 V V μA μA nA V z z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Current Protection Circuits © 2008 IXYS CORPORATION, All rights reserved DS9...




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