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2N2880

Microsemi Corporation

5 Amp/ 80V/ Planar/ NPN Power Transistors JAN/JTX/JANTXV/JANS

7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N2880 APPLICATIO...


Microsemi Corporation

2N2880

File Download Download 2N2880 Datasheet


Description
7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N2880 APPLICATIONS: Fast Switching High Frequency Switching and Amplifying FEATURES: High Reliability Greater Gain Stability 5 Amp, 80V, Planar, NPN Power Transistors JAN,JTX,JANTXV,JANS DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-59 ABSOLUTE MAXIMUM RATINGS SYMBOL VCBO* VCEO* VEBO* IC * IB * T STG* T J* * PT * θ CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" From Case for 10 Sec. Power Dissipation T A = 25° C T C = 100° C Thermal Resistance Junction to Case VALUE 110 80 8 5 0.5 -65 to 200 -65 to 200 230 UNITS V V V A A °C °C °C 2 30 3.33...




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