HMC358MS8G

HMC358MS8G / 358MS8GE v04.0607 MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz Features Pout: +11 dBm Phase Noise: -110 dBc/Hz @100 KHz No External Resonator Needed Single Supply: 3V @ 100 mA 15mm2 MSOP8G SMT Package Typical Applications Low noise MMIC VCO w/Buffer Amplifier for C-Band applications such as: UNII & Pt. to Pt. Radios 802.11a & HiperLAN WLAN VSAT Radios Functional Diagram General Description The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is 11 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance. 11 VCOS & PLOs - SMT Electrical Specifi cations, TA = +25° C, Vcc = +3V Parameter Frequency Range Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune Voltage (Vtune) Supply Current (Icc) Tune Port Leakage Current (Vtune= 10V) Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= +3V Frequency Drift Rate 9 -10 -20 10 150 0.8 0 100 10 8 Min. Typ. 5.8 - 6.8 11 -110 10 Max. Units GHz dBm dBc/Hz V mA μA dB dB dB MHz pp MHz/V MHz/°C 11 - 2 For price, delivery, and to place...