P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP6679GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ ...
Description
AP6679GH/J-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant G S
P-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
-30V 9mΩ -75A
Description
The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP6679GJ) is available for low-profile applications.
G D S G D S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1 3
Rating -30 +20 -75 -50 -300 89 0.71 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value 1.4 62.5 110
Units ℃/W ℃/W ℃/W
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1 200812304
Free Datasheet http://www.datasheet4u.com/
AP6679GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Condit...
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