AP30G120BSW-HF

AP30G120BSW-HF Halogen-Free Product Advanced Power Electronics Corp. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 1 1200V 30A Absolute Maximum Ratings Symbol VCES VGE IC@TC=25℃ IC@TC=100℃ ICM IF@TC=25℃ IFM PD@TC=25℃ TSTG TJ TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Pulse Forward Current Maximum Power Dissipation Storage Temperature Range Operating Junction Temperature Range Maximum Lead Temp. for Soldering Purposes , 1/8" from case for 5 seconds . Collector-Emitter Voltage Units V V A A A A A W ℃ ℃ ℃ 120 8 40 208 -55 to 150 -55 to 150 300 Notes: 1.Pulse width limited by max . junction temperature . Thermal Data Symbol Rthj-c(IGBT) Rthj-a Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Value 0.6 5 40 Units ℃/W ℃/W ℃/W Rthj-c(Diode) Thermal Resistance Junction-Case Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol IGES ICES VCE(sat) VGE(th) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Cies Coes Cres VF trr Qrr Parameter Gate-to-Emitter Leakage Current Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate Threshold Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fa...