isc Silicon NPN Power Transistor
DESCRIPTION ·With TO-3 package ·High switching speed ·Minimum Lot-to-Lot variations for...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·With TO-3 package ·High switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS For power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
3
A
PD
Total Power Dissipation@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W
2SC1870
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ;IB= 0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltag
IE=1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-emitter Saturation Voltage
IC= 5A ; IB= 1A
ICBO
Collector Cutoff Current
VCE=300V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 10A ; VCE= 5V
2SC1870
MIN MAX UNIT
250
V
300
V
7
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
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