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2SD525
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4.0A ·Complement to Type 2SB595 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommende...
Inchange Semiconductor
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