KU035N06P

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 60V, ID= 160A Drain-Source ON Resistance : RDS(ON)=3.5m (Max.) @VGS = 10V D N N A KU035N06P N-ch Trench MOS FET O C F E G B Q DIM MILLIMETERS _ 0.2 9.9 + A B C D E I K M L J H P F G H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 60 20 160* 101 480* 960 12 4.5 167 1.33 150 -55 ~ 150 mJ mJ V/ns W W/ A UNIT V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 0.75 62.5 /W /W * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junctio...