KML0D6NP20EA

SEMICONDUCTOR TECHNICAL DATA General Description It’s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. KML0D6NP20EA N and P-Ch Trench MOSFET B B1 A1 A FEATURES N-Channel : VDSS=20V, ID=600mA (RDS(ON)=0.70 : VDSS=20V, ID=500mA (RDS(ON)=0.85 : VDSS=20V, ID=350mA (RDS(ON)=1.25 P-Channel : VDSS=-20V, ID=-400mA (RDS(ON)=1.2 : VDSS=-20V, ID=-300mA (RDS(ON)=1.6 : VDSS=-20V, ID=-150mA (RDS(ON)=2.7 @ VGS=-4.5V). @ VGS=-2.5V). @ VGS=-1.8V). @ VGS=4.5V). @ VGS=2.5V). @ VGS=1.8V). C 1 6 2 C 5 D 3 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + 5 H 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC @TA=25 Drain Current DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range ) SYMBOL VDSS VGSS ID* IDP IS P D* Tj Tstg RthJA* N-Ch 20 6 515 370 650 450 280 150 -55 150 446 /W P-Ch -20 6 -390 -280 mA -650 -450 280 mW UNIT V V Marking Lot No. Type Name A1 Thermal Resistance, Junction to Ambient Note 1) *Surface Mounted on FR4 Board, t 5sec PIN CONNECTION (TOP VIEW) S1 G1 D2 1 6 D1 G2 S2 1 2 3 6 5 4 2 5 3 4 2008. 9. 10 Revision No : 3 J 1/6 Free Datasheet http://www.datasheet4u.com/ KML0D6NP20EA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-So...