2SA1988

DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. PACKAGE DIMENSIONS 15.7 MAX. FEATURES High Voltage VCEO = −200 V DC Current Gain hFE = 70 to 200 TO-3P Package 1.0 φ 3.2±0.2 4.7 MAX. 1.5 20.5MAX. 5.0 4 4.5±0.2 1.0±0.2 0.6±0.1 5.45 1 19 MIN. 3.4MAX. 2 3 ORDERING INFORMATION Type Number 2SA1988 Package MP-88 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipantion JunctionTemperature VCBO VCEO VEBO IC (DC) IC (pulse) *1 P2 *2 TJ −200 −200 −5.0 −7.0 -10 100 150 −55 to +150 *2 TC = 25 °C V V V A A W °C °C 2.2±0.2 5.45 2.8±0.1 MP-88 1.Base 2.Collector 3.Emitter 4.Fin (Collector) Storage Tempreature Tstg *1 PW ≤ 300 µs, Duty Cycle ≤ 10 % ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Gain Band width Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob 70 20 −0.6 −1.3 40 270 −2.0 −2.0 MIN. TYP. MAX. −50 −50 200 UNIT TEST CONDITIONS VCB = −200 V, IE = 0 VEB = −3.0 V, IC = 0 VCE = −5.0 V, IC = −1.0 A VCE = −5.0 V, IC = −3.5 A IC = −5.0 V, IE = −0.5 V IC = −5.0 V, IE = −0.5 V VCE = −5.0 V, IC = 1.0 mA VCB = −...