Document
H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3
OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
APPROVALS z UL recognised, File No. E91231 Package System " GG " 'X' SPECIFICATION APPROVALS
z
Dimensions in mm 2.54 7.0 6.0 1.2 7.62 6.62 7.62 4.0 3.0 0.5 13° Max 0.26 1 2 3 6 5 4
VDE 0884 in 3 available lead form : - STD - G form
z
- SMD approved to CECC 00802 Certified to EN60950 by Nemko - Certificate No. P01102464
3.0
DESCRIPTION The H11AV series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High BVCEO (70V min) z All electrical parameters 100% tested z Custom electrical selections available APPLICATIONS z DC motor controllers z Industrial systems controllers z Measuring instruments z Signal transmission between systems of different potentials and impedances
0.5
3.35
ABSOLUTEMAXIMUMRATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUTDIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Collector Current Power Dissipation POWER DISSIPATION 70V 70V 6V 50mA 160mW 60mA 6V 105mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6 0.1 10.46 9.86
1.25 0.75
0.26 10.16
Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS 2004 LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
DB92055
Free Datasheet http://www.datasheet4u.com/
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) H11AV1 H11AV2 H11AV3 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 70 70 6 50 MIN TYP MAX UNITS 1.2 1.5 10 V μA V V V nA TEST CONDITION IF = 10mA VR = 6V IC = 1mA IC = 100μA IE = 100μA VCE = 10V 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 20mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , fig 1 IF= 10mA, RL = 75Ω
Coupled
100 50 20
300
% % % V VRMS VPK Ω
0.4
Input-output Isolation Resistance RISO 5x1010 Rise Time, tr Fall Time, tf Note 1 Note 2 2 2
μs μs
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
VCC Input RL = 75Ω Output Output 10% tr tf ton toff
1.