2SA1980M

? Semiconductor 2SA1980M PNP Silicon Transistor Description General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with 2SC5343M Ordering Information Type NO. 2SA1980M Marking 1980 Package Code TO-92M Outline Dimensions 3.9~4.1 2.9~3.1 unit : mm 0.44 REF 0.52 REF 1.27 Typ. 2.44~2.64 13.6~14.4 0.7 Typ. 2.9~3.1 3.8 Min. 0.42 Typ. PIN Connections 1. Emitter 2. Collector 3. Base KST-I001-002 1 2SA1980M Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature Ta=25°C Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -50 -50 -5 -150 400 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob NF Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1KHz, Rg=10KΩ Min. Typ. Max. -50 -50 -5 70 80 4 -0.1 -0.1 700 -0.3 7 10 Unit V V V µA µA V MHz pF dB *:...