2SA1979U

Semiconductor 2SA1979U PNP Silicon Transistor Description Medium power amplifier Features Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342U Ordering Information Type NO. 2SA1979U Marking A : hFE rank Package Code SOT-323 Outline Dimensions unit : mm 2.0~2.2 1.2~1.3 1 1.8~2.2 1.2~1.4 3 0.2~0.4 2 0.1~0.2 0.8~1.0 0~0.1 0.1 Min. PIN Connections 1. Base 2. Emitter 3. Collector KST-3024-001 1 2SA1979U Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -40 -32 -5 -500 200 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz Min. Typ. Max. -40 -32 -5 70 200 7.5 -0.1 -0.1 240 -0.25 - Unit V V V µA µA V MHz pF * : hFE rank / O : 70~140, Y : 120~240 KST-3024-001 ...