2SA1979M

Semiconductor 2SA1979M PNP Silicon Transistor Description Medium power amplifier Features Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342M Ordering Information Type NO. 2SA1979M Marking 1979 Package Code TO-92M Outline Dimensions 3.9~4.1 2.9~3.1 unit : mm 0.44 REF 0.52 REF 1.27 Typ. 2.44~2.64 13.6~14.4 0.42 Typ. 0.7 Typ. 2.9~3.1 3.8 Min. PIN Connections 1. Emitter 2. Collector 3. Base KST-I010-001 1 2SA1979M Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -40 -32 -5 -500 400 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob Test Condition IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz Min. Typ. Max. -40 -32 -5 70 200 7.5 -0.1 -0.1 240 -0.25 - Unit V V V µA µA V MHz pF * : hFE rank / O : 70~140, Y : 120~240 KST...