Semiconductor
2SA1979M
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• Large collector current...
Semiconductor
2SA1979M
PNP Silicon
Transistor
Description
Medium power amplifier
Features
Large collector current : ICMax=-500mA Suitable for low-Voltage operation because of its low saturation voltage Complementary pair with 2SC5342M
Ordering Information
Type NO. 2SA1979M Marking 1979 Package Code TO-92M
Outline Dimensions
3.9~4.1 2.9~3.1
unit : mm
0.44 REF 0.52 REF
1.27 Typ. 2.44~2.64
13.6~14.4 0.42 Typ.
0.7 Typ.
2.9~3.1 3.8 Min.
PIN Connections 1. Emitter 2. Collector 3. Base
KST-I010-001
1
2SA1979M
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-40 -32 -5 -500 400 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage
Transistor frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob
Test Condition
IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz
Min. Typ. Max.
-40 -32 -5 70 200 7.5 -0.1 -0.1 240 -0.25 -
Unit
V V V µA µA V MHz pF
*
: hFE rank / O : 70~140, Y : 120~240
KST...