2SA1965

Ordering number:5031 PNP Epitaxial Planar Silicon Transistor 2SA1965 Muting Circuit Applications Features · Very small-sized package permitting 2SA1965applied sets to be made small and slim. · Small output capacitance. · Low collectot-to-emitter saturation voltage. · Small ON resistance. Package Dimensions unit:mm 2106A [2SA1965] 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Marking : KA Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=–12V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–5mA VCE=–5V, IC=–10mA VCB=–10V, f=1MHz IC=–10mA, IB=–1mA IC=–10mA, IB=–1mA SANYO : SMCP Ratings –15 –10 –5 –100 –200 –20 150 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ 200 600 5.0 –16 –0.75 max –0.1 –0.1 600 –35 –1.1 Unit µA µA MHz pF mV V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, ...