ZVN2106G

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – NOVEMBER 1995 FEATURES * 60 Volt VDS * RDS(on)=2Ω ZVN2106G D S COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP2106G ZVN2106 G D ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 710 8 ± 20 2.0 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. MAX. UNIT CONDITIONS. BV DSS V GS(th) I GSS I DSS 60 0.8 2.4 20 500 100 2 2 300 75 45 20 7 8 12 15 V V nA nA µA A Ω mS pF pF pF ns ns ns ns V DD ≈ 18V, I D=1A V DS=18 V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125°C (2) V DS=18V, V GS=10V V GS=10V,I D=1A V DS=18V,I D=1A On-State Drain Current (1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Free Datasheet http://www.datasheet4u.com/ Common Source Output Capacitance (2) ReverseTransfer Capacitance(2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (...